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Domain epitaxy of crystalline BeO films on GaN and ZnO substrates
Author(s) -
Lee Seung Min,
Yum Jung Hwan,
Larsen Eric S.,
Shervin Shahab,
Wang Weijie,
Ryou JaeHyun,
Bielawski Christopher W.,
Lee Woo Chul,
Kim Seong Keun,
Oh Jungwoo
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16198
Subject(s) - wurtzite crystal structure , materials science , beryllium oxide , epitaxy , crystallinity , thin film , transmission electron microscopy , crystallography , layer (electronics) , nanotechnology , composite material , zinc , beryllium , metallurgy , chemistry , organic chemistry
We demonstrated the growth of wurtzite‐crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single‐crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain‐matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X‐ray diffraction (XRD) confirmed the in‐plane crystallization of BeO‐on‐substrates in the (002){102} BeO ||(002){102} Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier‐filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.