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Preparation of optical media with NIR luminescent Bi + impurity centers by ion exchange
Author(s) -
Romanov Alexey N.,
Haula Elena V.,
Kouznetsov Mikhail S.,
Lisitsky Igor S.,
Pimkin Nikita A.,
Boldyrev Kirill N.,
Sereda Andrei E.,
Shashkin Dmitry P.,
Korchak Vladimir N.
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16170
Subject(s) - bismuth , photoluminescence , doping , luminescence , impurity , ion , materials science , ion exchange , analytical chemistry (journal) , crystal (programming language) , chemistry , inorganic chemistry , optoelectronics , metallurgy , organic chemistry , chromatography , computer science , programming language
Single crystal of TlCl was doped with NIR photoluminescent univalent bismuth cations by prolonged immersion in liquid bismuth metal. The ion exchange Tl + + Bi 0 ↔ Tl 0 + Bi + at the crystal surface with subsequent Bi + migration to the bulk are expected to drive the doping process. Contrary with Bi‐doped TlCl crystals, grown by Bridgman method, the ion exchange does not produce the additional nonluminescent bismuth‐containing centers. The investigation of photoluminescence emission and excitation spectra lead to the conclusion, that Bi + is the main NIR emissive center in Bi‐doped TlCl.