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Effectively controlling the crystal growth of Cr 2 O 3 using SiO 2 as the second phase
Author(s) -
Yao Suzhe,
Wang Enhui,
Chen Junhong,
Chou KuoChih,
Hou Xinmei
Publication year - 2019
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.16060
Subject(s) - sintering , materials science , crystal (programming language) , phase (matter) , crystal growth , oxide , mineralogy , chemical engineering , metallurgy , crystallography , chemistry , organic chemistry , computer science , engineering , programming language
The inevitable crystal growth of Cr 2 O 3 during sintering causes the generation of cracks, which degrades the high‐temperature properties. To solve this, SiO 2 is adopted as the second phase and the specimens are sintered at 1200‐1500°C under buried carbon condition. The results show that the addition of approximate 20 wt% SiO 2 can effectively control the crystal growth of Cr 2 O 3 . The Cr 2 O 3 particle size can keep uniform ranging from 4 μm to 12 μm even when the temperature increases to 1500°C. The sintering of Cr 2 O 3 mainly follows the defect model, which depends on the reaction temperatures and atmospheres. This work should also contribute to the sintering of other oxide refractories with controlled crystal size for practical application.