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Conditions for growth of AlN single crystals in Al–Sn flux
Author(s) -
Song Yelim,
Kawamura Fumio,
Taniguchi Takashi,
Shimamura Kiyoshi,
Ohashi Naoki
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15865
Subject(s) - nitrogen , materials science , dissolution , scanning electron microscope , yield (engineering) , morphology (biology) , flux (metallurgy) , nitrogen gas , nitride , analytical chemistry (journal) , crystal growth , crystallography , gas pressure , chemical engineering , metallurgy , composite material , chemistry , layer (electronics) , organic chemistry , chromatography , biology , petroleum engineering , engineering , genetics
Abstract In this study, we investigated the Al–Sn flux system and its growth conditions to obtain AlN single crystals. AlN single crystals of a size of 50 μm were successfully grown using an Al–Sn melt under nitrogen gas pressure. The growable region of the AlN crystals was established using a pressure‐temperature diagram. The required nitrogen gas pressure for the growth of the AlN crystals was found to decrease with increasing temperature, and AlN was grown at 0.1 MPa nitrogen pressure above 1300°C. By investigating the AlN yield with various Al concentrations, we confirmed that the Al component in the Al–Sn melt facilitated nitrogen dissolution. Finally, scanning electron microscopy analysis showed that the obtained AlN particles showed good morphology.