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Epitaxial growth of 3C–SiC on Si(111) and (001) by laser CVD
Author(s) -
Zhu Peipei,
Yang Meijun,
Xu Qingfang,
Sun Qingyun,
Tu Rong,
Li Jun,
Zhang Song,
Li Qizhong,
Zhang Lianmeng,
Goto Takashi,
Shi Ji,
Li Haiwen,
Ohmori Hitoshi,
Kosinova Marina,
Basu Bikramjit
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15557
Subject(s) - epitaxy , materials science , pulsed laser deposition , surface roughness , surface finish , laser , root mean square , analytical chemistry (journal) , deposition (geology) , activation energy , growth rate , thin film , nanotechnology , chemistry , composite material , optics , layer (electronics) , paleontology , physics , electrical engineering , engineering , chromatography , sediment , biology , geometry , mathematics
Epitaxial 3C–SiC films have been deposited on Si(111) and Si(001) substrates via laser CVD with deposition rate of 12.32 and 15.56 μm/h, respectively. The activation energy of 3C–SiC on Si(111) and Si(001) was 80 and 160 kJ/mol, and the root mean square ( RMS ) roughness ( w ) as a function of the film thickness ( h ) follows power laws of w ~ h 0.31 and w ~ h 0.06 , respectively. The growth mechanisms of epitaxial 3C–SiC films on Si(111) and Si(001) was investigated based on the structural analysis and roughness evolution.