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Enhanced thermal conductivity in Si 3 N 4 ceramic with the addition of Y 2 Si 4 N 6 C
Author(s) -
Li Yinsheng,
Kim HaNeul,
Wu Haibo,
Kim MiJu,
Ko JaeWoong,
Park YoungJo,
Huang Zhengren,
Kim HaiDoo
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15544
Subject(s) - materials science , ceramic , sintering , thermal conductivity , microstructure , nitrogen , analytical chemistry (journal) , oxygen , mineralogy , conductivity , doping , metallurgy , composite material , chemistry , optoelectronics , organic chemistry , chromatography
Si 3 N 4 ceramic was densified at 1900°C for 12 hours under 1 MPa nitrogen pressure, using MgO and self‐synthesized Y 2 Si 4 N 6 C as sintering aids. The microstructures and thermal conductivity of as‐sintered bulk were systematically investigated, in comparison to the counterpart doped with Y 2 O 3 ‐MgO additives. Y 2 Si 4 N 6 C addition induced a higher nitrogen/oxygen atomic ratio in the secondary phase by introducing nitrogen and promoting the elimination of SiO 2 , resulting in enlarged grains, reduced lattice oxygen content, increased Si 3 N 4 ‐Si 3 N 4 contiguity and more crystallized intergranular phase in the densified Si 3 N 4 specimen. Consequently, the substitution of Y 2 O 3 by Y 2 Si 4 N 6 C led to a great increase in ~30.4% in thermal conductivity from 92 to 120 W m −1 K −1 for Si 3 N 4 ceramic.