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Effect of topological structure on photoluminescence of PbSe quantum dot‐doped borosilicate glasses
Author(s) -
Xu Zhousu,
Liu Xiaofeng,
Jiang Chun,
Ma Dewei,
Ren Jinjun,
Cheng Cheng,
Qiu Jianrong
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15331
Subject(s) - borosilicate glass , photoluminescence , materials science , full width at half maximum , doping , quantum dot , optoelectronics , analytical chemistry (journal) , mineralogy , composite material , chemistry , chromatography
Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt‐quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiber‐drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070‐1330 nm) band with large full‐width at half‐maximum (FWHM) values (189‐266 nm) and notable Stokes shift (100‐210 nm) was observed, which depended on the B 2 O 3 concentration. The PL lifetime was about 1.42‐2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO 3 ] triangle units forming the two‐dimensional (2D) glass network structure clearly increased with increasing B 2 O 3 concentration, which could accelerate the movement of Pb 2+ and Se 2− ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD‐doped borosilicate glass may find potential application in ultra‐wideband fiber amplifiers.