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Influence of inverse spinel structured CuGa 2 O 4 on microwave dielectric properties of normal spinel ZnGa 2 O 4 ceramics
Author(s) -
Lu Xiaochi,
Bian Wenjie,
Li Yaoyao,
Zhu Haikui,
Fu Zhenxiao,
Zhang Qitu
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15264
Subject(s) - spinel , raman spectroscopy , analytical chemistry (journal) , dielectric , materials science , ceramic , octahedron , lattice constant , crystal structure , mineralogy , microwave , crystallography , chemistry , metallurgy , optics , physics , diffraction , optoelectronics , chromatography , quantum mechanics
Spinel Zn 1‐ x C u x Ga 2 O 4 ( x = 0‐0.15) ceramics were prepared by the conventional solid‐state method. Only a single phase was indexed in all samples. The continuous lattice contraction of ZnGa 2 O 4 unit cell was caused by Cu 2+ substitution, and the lattice parameter shows a linear correlation with the content of Cu. The refined crystal structure parameters suggest that Cu 2+ preferentially occupies the octahedron site, and the degree of inversion of Zn 1‐ x Cu x Ga 2 O 4 ( x = 0‐0.15) ceramics almost equals to the content of Cu 2+ . The relative intensity of A* 1g mode in Raman spectra confirm that the degree of inversion climbed with the growing content of Cu 2+ . The experimental and theoretical dielectric constant of Zn 1‐ x Cu x Ga 2 O 4 ceramics fit well. Zn 1‐ x Cu x Ga 2 O 4 ( x = 0.01) ceramics sintered at 1400°C for 2 h exhibited good microwave dielectric properties, with ε r = 9.88, Q × f = 131,445 GHz, tan δ = 6.85 × 10 −5 , and τ f = −60 ppm/°C.