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High‐speed heteroepitaxial growth of 3C‐SiC (111) thick films on Si (110) by laser chemical vapor deposition
Author(s) -
Sun Qingyun,
Zhu Peipei,
Xu Qingfang,
Tu Rong,
Zhang Song,
Shi Ji,
Li Haiwen,
Zhang Lianmeng,
Goto Takashi,
Yan Jiasheng,
Li Shusen
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15260
Subject(s) - chemical vapor deposition , epitaxy , materials science , pulsed laser deposition , crystallite , substrate (aquarium) , argon , deposition (geology) , thin film , analytical chemistry (journal) , laser , combustion chemical vapor deposition , carbon film , optoelectronics , nanotechnology , chemistry , optics , metallurgy , layer (electronics) , oceanography , organic chemistry , chromatography , biology , paleontology , physics , sediment , geology
3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD ) using hexamethyldisilane ( HMDS ) as precursor and argon (Ar) as dilution gas. The 3C‐SiC (111) polycrystalline films were prepared at deposition temperature ( T dep ) of 1423‐1523 K, whereas the 3C‐SiC (111) epitaxial films were obtained at 1573‐1648 K with the thickness of 5.40 to 9.32 μm. The in‐plane relationship was 3C‐SiC [‐1‐12]//Si [001] and 3C‐SiC [‐110]//Si [‐110]. The deposition rates ( R dep ) were 16.2‐28.0 μm/h, which are 2 to 100 times higher than that of 3C‐SiC (111) epi‐grown on Si (111) by conventional CVD . The growth mechanism of 3C‐SiC (111) epitaxial films has also been proposed.
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