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High‐performance varistors prepared by hot‐dipping tin oxide thin films in Sb 2 O 3 powder: Influence of temperature
Author(s) -
Wang Qi,
Peng Zhijian,
Lv Changchun,
Fu Xiuli
Publication year - 2018
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15161
Subject(s) - varistor , materials science , tin , oxide , tin oxide , grain boundary , sputtering , thin film , analytical chemistry (journal) , metallurgy , temperature coefficient , breakdown voltage , mineralogy , composite material , microstructure , voltage , electrical engineering , nanotechnology , chemistry , chromatography , engineering
A series of SnO x –Sb 2 O 3 thin film varistors were fabricated through hot‐dipping tin oxide films deposited by radio‐frequency magnetron sputtering in Sb 2 O 3 powder at varied temperatures in air. With the increase in hot‐dipping temperature ( HDT ) from 200°C to 600°C, the nonlinear coefficient (α) of the samples increased first and then decreased, reaching the maximum at 500°C, which was mainly determined by the completeness of high‐resistant Sb 2 O 3 layer at tin oxide grain boundary and the chemical composition of tin oxide films. Correspondingly, the leakage current ( I L ) decreased first and increased later. The breakdown electric field ( E 100 mA ) decreased constantly with increasing HDT . The SnO x –Sb 2 O 3 film varistors prepared at 500°C exhibited the optimum nonlinear properties with the maximum α of 10.88, the minimum I L of 36.3 mA/cm 2 , and an E 100mA of 0.0188 V/nm. The obtained nanoscaled film varistors would be promising in electrical/electronic devices working in low voltage.