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High‐temperature electrical and thermal transport behaviors in layered structure WSe 2
Author(s) -
Liu Yaochun,
Liu Junfu,
Tan Xing,
Li Yueming,
Liu Rui,
Lin Yuanhua,
Nan Cewen
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.15069
Subject(s) - materials science , seebeck coefficient , thermoelectric effect , electrical resistivity and conductivity , anisotropy , dimensionless quantity , sintering , thermal conductivity , hot pressing , pressing , alloy , figure of merit , thermoelectric materials , semiconductor , condensed matter physics , composite material , optoelectronics , thermodynamics , optics , electrical engineering , physics , engineering
Two‐dimensional transition‐metal dichalcogenides semiconductors ( TMDC s) with layered structures have been concerned as promising thermoelectric (TE) materials for several years. However, WS e 2 as one of TMDC s is barely investigated. Herein, we systematically investigated the high‐temperature electrical and thermal transport behaviors in layered structure WS e 2 , demonstrating that WS e 2 possesses high Seebeck coefficient and low thermal conductivity. The study of sintering process shows that the best electrical properties can be obtained in the sample sintered at 1123 K. Besides, anisotropic thermoelectric properties were also revealed. It is found that the dimensionless figure of merit ( ZT ) in the direction parallel to the pressing direction is higher than that in the direction perpendicular to the pressing direction. The highest ZT value of 0.03 is obtained at 923 K, which is an appreciable value for the pristine alloy material.