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Influence of A‐site nonstoichiometry on the electrical properties of BT ‐ BMT
Author(s) -
Muhammad Raz,
Khesro Amir
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14684
Subject(s) - dielectric , materials science , dielectric loss , permittivity , stoichiometry , ceramic , barium , analytical chemistry (journal) , thermal conduction , atmospheric temperature range , vacancy defect , oxygen , mineralogy , chemistry , crystallography , composite material , optoelectronics , metallurgy , thermodynamics , physics , organic chemistry , chromatography
A stoichiometric and 2 mol% Ba deficient samples in the formulation 0.5BaTiO 3 ‐0.5BiMg 1/2 Ti 1/2 O 3 ( BT ‐ BMT ) were processed via a mixed oxide solid‐state route. The deficient sample exhibited a high relative permittivity (2100±15%) over the temperature range 90‐450°C and a low dielectric loss (tanδ < 0.01), maintained up to high temperature (430°C). The samples exhibited intrinsic conduction mechanism and showed an n ‐type character. By introducing 2 mol% Ba vacancies, a dramatic influence on the dielectric loss was observed which was mainly associated with the trapping of electrons by barium‐oxygen vacancy pair associated with the intentionally produced cation vacancies. Thus, control of composition by creating deficiency allows fine tuning of the dielectric properties of BT ‐ BMT ceramics for applications in high‐temperature multilayered ceramic capacitors.