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Structural study of β‐SiC(001) films on Si(001) by laser chemical vapor deposition
Author(s) -
Zhu Peipei,
Xu Qingfang,
Chen Ruyi,
Zhang Song,
Yang Meijun,
Tu Rong,
Zhang Lianmeng,
Goto Takashi,
Yan Jiasheng,
Li Shusen
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14672
Subject(s) - epitaxy , chemical vapor deposition , materials science , combustion chemical vapor deposition , pulsed laser deposition , substrate (aquarium) , deposition (geology) , thin film , hybrid physical chemical vapor deposition , analytical chemistry (journal) , carbon film , composite material , chemistry , nanotechnology , layer (electronics) , environmental chemistry , geology , paleontology , oceanography , sediment
β‐SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was β‐SiC(001){111}//Si(001){111}, and multiple twins {111} planes were identified. The maximum deposition rate was 23.6 μm/h, which is 5‐200 times higher than that of conventional chemical vapor deposition methods. The density of twins increased with increasing β‐SiC thickness. The cross section of the films exhibited a columnar structure, containing twins at {111} planes that were tilted 15.8° to the surface of substrate. The growth mechanism of the films was discussed.
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