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Fundamental mechanisms responsible for the temperature coefficient of resonant frequency in microwave dielectric ceramics
Author(s) -
Zhang Shengke,
Sahin Hasan,
Torun Engin,
Peeters Francois,
Martien Dinesh,
DaPron Tyler,
Dilley Neil,
Newman Nathan
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14648
Subject(s) - temperature coefficient , dielectric , ceramic , microwave , materials science , resonator , condensed matter physics , thermodynamics , doping , analytical chemistry (journal) , dielectric resonator , nuclear magnetic resonance , chemistry , physics , composite material , optoelectronics , quantum mechanics , chromatography
Abstract The temperature coefficient of resonant frequency (τ f ) of a microwave resonator is determined by three materials parameters according to the following equation: τ f =−(½ τ ε + ½ τ μ + α L ), where α L , τ ε , and τ μ are defined as the linear temperature coefficients of the lattice constant, dielectric constant, and magnetic permeability, respectively. We have experimentally determined each of these parameters for Ba(Zn 1/3 Ta 2/3 )O 3 , 0.8 at.% Ni‐doped Ba(Zn 1/3 Ta 2/3 )O 3 , and Ba(Ni 1/3 Ta 2/3 )O 3 ceramics. These results, in combination with density functional theory calculations, have allowed us to develop a much improved understanding of the fundamental physical mechanisms responsible for the temperature coefficient of resonant frequency, τ f .