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Further analysis of high‐voltage ZnO varistor prepared from novel chemically aided method
Author(s) -
Cheng Lihong,
Zheng Liaoying,
Zeng Jiangtao,
Zhao Kunyu,
Shi Xue,
Ruan Xuezheng,
Li Guorong,
Yang Jia,
Liu Yi
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14562
Subject(s) - varistor , materials science , microstructure , grain boundary , homogeneous , grain size , voltage , characterization (materials science) , analytical chemistry (journal) , composite material , nanotechnology , electrical engineering , chemistry , thermodynamics , physics , chromatography , engineering
Based on previous work, this study further investigated the high‐voltage varistor materials prepared from chemically aided method. Microstructural characterization and electrical measurement results showed that the sample possessed more homogeneous microstructure and ultrahigh drop voltage per grain boundary ( V gb ) than the conventional sample. The obtained ultrahigh value of V gb is connected with the much lower donor concentration ( N d ) and density of interface states ( N IS ) of the samples, which resulted from the increased number of active grain boundaries per unit volume. The improved homogeneous microstructure, together with the smaller grain size and narrower size distribution are essential to obtain high‐voltage ZnO varistor.