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Controllable Formation of the Crystalline Phases in Ge–Ga–S Chalcogenide Glass‐Ceramics
Author(s) -
Yang Xinyu,
Zhang Mingjie,
Yan Kunlun,
Han Liyuan,
Xu Qin,
Liu Haitao,
Wang Rongping
Publication year - 2017
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14492
Subject(s) - chalcogenide , chalcogenide glass , materials science , ceramic , raman spectroscopy , stoichiometry , glass transition , mineralogy , diffraction , chemical engineering , analytical chemistry (journal) , composite material , optics , metallurgy , chemistry , polymer , physics , chromatography , engineering
We prepared chemically stoichiometric, S‐poor and S‐rich Ge–Ga–S glasses and annealed them at a temperature that was 20°C higher than its respective glass transition temperature. We aimed at tuning the formation of the different crystals in chalcogenide glass‐ceramics. Through systematic characterization of the structure using X‐ray diffraction and Raman scattering spectra, we found that, GeS 2 and GeS crystals only can be created in S‐rich and S‐poor glass‐ceramics, respectively, while all GeS, Ga 2 S 3 , and GeS 2 crystals exist in chemically stoichiometric glass‐ceramics. Moreover, we demonstrated the homogeneous distribution of the crystals can be formed in the S‐rich glass‐ceramics from the surface to the interior via composition designing. The present approach blazes a new path to control the growth of the different crystals in chalcogenide glass‐ceramics.