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The Distortion‐Adjusted Change of Thermal Expansion Behavior of Cubic Magnetic Semiconductor (Sc 1− x M x )F 3 (M = Al, Fe)
Author(s) -
Han Fei,
Chen Jun,
Hu Lei,
Ren Yang,
Rong Yangchun,
Pan Zhao,
Deng Jinxia,
Xing Xianran
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14399
Subject(s) - thermal expansion , negative thermal expansion , condensed matter physics , scattering , lattice (music) , semiconductor , pair distribution function , distortion (music) , thermal , chemistry , materials science , crystallography , physics , optics , thermodynamics , quantum mechanics , amplifier , cmos , optoelectronics , acoustics
For the study of negative thermal expansion (NTE) compounds, it is critical to effectively control the thermal expansion. In this letter, a chemical approach has been taken to control the thermal expansion behavior in ScF 3 which has a strong NTE. Owing to the difference of radius of substituting ions, local distortion inevitably emerges in the lattice matrix, which is verified by pair distribution function analysis of high‐resolution synchrotron X‐ray scattering. It is a valuable clue that the thermal expansion behaviors in the ScF 3 based systems and other trifluorides are correlated closely to structural distortion of metal‐F‐metal linkages. In addition, the introduction of 3 d transition‐metal enables its semiconductor and ferromagnetic characteristics. This study provides important reference opinion for the control of thermal expansion and introduction of multifunctionalization for those NTE compounds with open framework structure.