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Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry of Glasses and Amorphous Films from Ge–As–Se System
Author(s) -
Šútorová Katarína,
Prokeš Lubomír,
Nazabal Virginie,
Baudet Emeline,
Havel Josef,
Němec Petr
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14366
Subject(s) - chalcogenide , analytical chemistry (journal) , amorphous solid , stoichiometry , raman spectroscopy , thin film , mass spectrometry , desorption , chalcogenide glass , materials science , pulsed laser deposition , laser , ionization , raman scattering , ion , chemistry , crystallography , optics , optoelectronics , nanotechnology , adsorption , physics , organic chemistry , chromatography
Laser Desorption Ionization Time‐of‐Flight Mass Spectrometry was exploited for the characterization of Ge–As–Se chalcogenide glasses and corresponding thin films fabricated using pulsed laser deposition. Main achievement of the paper is the determination of laser generated clusters’ stoichiometry. The clusters observed were As b + ( b = 1–3), Se 2 − , binary As b Se + ( b = 1–3), As b Se c − ( b = 1–3, c = 1–4), Ge 2 Se c − ( c = 2–3), As 3 Se 2 + , Ge 2 As b − ( b = 2–3), Ge 3 As b − ( b = 1–2), Ge 3 Se 4 − , As 5 Se c − ( c = 4–5), GeAsSe 4 − , Ge a AsSe 5 − ( a = 1–4), GeAs 2 Se 3 − , GeAs 3 Se 2 − , Ge 2 As 2 Se 2 − , Ge 2 AsSe c − ( c = 6–7), and GeAs 3 Se c − ( c = 5–6) (in positive as well as in negative ion mode). The stoichiometries of identified species are compared with the structural units of the glasses/thin films revealed via Raman scattering spectra analysis. Some species are suggested to be fragments of bulk glass as well as thin films. Described method is useful also for the evaluation of the contamination of chalcogenide glasses or their thin films.