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Growth of c ‐Axis‐Oriented BiCuSeO Thin Films Directly on Si Wafers
Author(s) -
Wu Xiaolin,
Gao Linjie,
Roussel Pascal,
Dogheche Elhadj,
Wang Jianglong,
Fu Guangsheng,
Wang Shufang
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14359
Subject(s) - materials science , wafer , crystallinity , thin film , amorphous solid , optoelectronics , polycrystalline silicon , transmission electron microscopy , composite material , texture (cosmology) , electrical resistivity and conductivity , crystallite , silicon , layer (electronics) , nanotechnology , crystallography , thin film transistor , metallurgy , electrical engineering , chemistry , image (mathematics) , engineering , artificial intelligence , computer science
Single‐phase, c ‐axis‐oriented BiCuSeO thin films have been directly grown on the commercial silicon (001) wafers without any surface pretreatment by using pulsed laser deposition. X‐ray diffraction pole figure confirms that the film does not have any ab‐ plane texture, whereas cross‐sectional transmission electron microscopy shows good crystallinity of the film even if there exists an amorphous native oxide layer on the wafers surface. At room temperature, the resistivity of the film is about 14 mΩ cm, which is much lower than that reported for corresponding single crystals as well as polycrystalline bulks. This work demonstrates the possibility of using the available state‐of‐the‐art silicon processing techniques to create BiCuSeO‐based thin‐film thermoelectric devices.