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Effect of Oxygen Vacancy on Electrical Property of Acceptor Doped BaTiO 3 –Na 0.5 Bi 0.5 TiO 3 –Nb 2 O 5 X8R Systems
Author(s) -
Sun Yue,
Liu Hanxing,
Hao Hua,
Zhang Shujun
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14336
Subject(s) - dielectric , curie temperature , materials science , ferroelectricity , raman spectroscopy , analytical chemistry (journal) , vacancy defect , doping , activation energy , acceptor , coercivity , electrical resistivity and conductivity , oxygen , conductivity , condensed matter physics , crystallography , chemistry , ferromagnetism , optics , physics , electrical engineering , optoelectronics , engineering , chromatography , organic chemistry
In this study, we reported a new BaTiO 3 –Na 0.5 Bi 0.5 TiO 3 –Nb 2 O 5 –Mn 2 O 3 /Fe 2 O 3 /Co 3 O 4 /In 2 O 3 X8R system with high dielectric constant (>2100) at room temperature. The impacts of oxygen vacancy (V O¨ ) on dielectric, electrical conductivity, and ferroelectric properties were systematically studied. The Curie point is largely depended on theV O¨concentration, which can be confirmed by the dielectric behavior and A 1g octahedral breathing modes in Raman spectrum. In addition, the activation energy ofV O¨diffusion is greatly reduced with the increase inV O¨concentration. It was found that the remnant polarization and coercive field were both decreased with increasingV O¨concentration, due to the facilitated defect dipoles reorientation and domain switching.