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High‐Speed Preparation of Highly (100)‐Oriented CeO 2 Film by Laser Chemical Vapor Deposition
Author(s) -
Zhao Pei,
Su Shi,
Wang Ying,
Chi Chen,
Zhang Zhan Hui,
Mao Yang Wu,
Huang Zhi liang,
Xu Yuan Lai,
Goto Takashi
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14279
Subject(s) - materials science , chemical vapor deposition , pulsed laser deposition , epitaxy , deposition (geology) , substrate (aquarium) , thin film , laser , combustion chemical vapor deposition , analytical chemistry (journal) , laser power scaling , mineralogy , carbon film , nanotechnology , optics , chemistry , layer (electronics) , paleontology , oceanography , physics , chromatography , sediment , geology , biology
CeO 2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO 3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)‐oriented CeO 2 films with wedge‐caped columnar grains were prepared, whose epitaxial growth relationship was CeO 2 [100]// LAO [100] (CeO 2 [010]// LAO [011]). Their full width at half maximum of the ω‐scan on the (200) reflection and that of the ϕ‐scan on the (220) reflection were 0.8°–1.8° and 0.7°–1.2°, respectively. The highest deposition rate at which CeO 2 film with pure (100) preferred orientation could be obtained was 30 μm h −1 .