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Bismuth Zinc Niobate Thin Film Multilayer Capacitors with Cu Electrodes Fabricated at Low Temperature by RF Magnetron Sputtering
Author(s) -
He Fan,
Ren Wei,
Khan Muhammad Saeed,
Shi Peng
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14161
Subject(s) - materials science , thin film , amorphous solid , electrode , sputter deposition , dielectric , dissipation factor , sputtering , cavity magnetron , bismuth , analytical chemistry (journal) , capacitor , capacitance , layer (electronics) , optoelectronics , composite material , nanotechnology , metallurgy , chemistry , electrical engineering , crystallography , engineering , chromatography , voltage
Thin film multilayer capacitors ( MLC s) composed of amorphous Bi 1.5 Zn 1.0 Nb 1.5 O 7 ( BZN ) dielectric layers with Cu internal electrodes were fabricated by radio‐frequency magnetron sputtering at a temperature below 150°C. Both BZN thin films and Cu internal electrodes were deposited in situ through a set of steel shadow masks at room temperature and postannealed at 150°C. The BZN dielectric layers used in the MLC s are amorphous and the thickness for each BZN layer is approximately 220 nm. Metallic Cu layer used as the internal electrode is about 50 nm thick. Auger electron spectroscopy analysis indicates that there are no diffusion between BZN films and Cu electrodes, as well as no oxidation of Cu electrodes during the fabrication process owing to room‐temperature deposition and low‐temperature postannealing (150°C). The thin film MLC s with different number of BZN layers were fabricated. The thin film MLC s with five BZN layers exhibit promising properties with dielectric constant of 72, capacitance density of 1600 nF /cm 2 , and loss tangent of 5.4% at 10 kH z. These results suggest that the BZN thin film MLC s have potential applications for the embedded PCB s.