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Effects of Heat‐Treatment Temperature on the Properties of (1– x )(Na 0.5 Bi 0.5 )TiO 3 – x BiAlO 3 Lead‐Free Piezoelectric Thin Films
Author(s) -
Yao Yunqiang,
Wu Xiaoqing,
Shi Peng,
Ye ZuoGuang
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14116
Subject(s) - materials science , poling , dielectric , piezoelectricity , bismuth , ferroelectricity , dissipation factor , lead zirconate titanate , annealing (glass) , piezoelectric coefficient , dielectric loss , composite material , ceramic , analytical chemistry (journal) , mineralogy , optoelectronics , metallurgy , chemistry , chromatography
Lead‐free sodium bismuth titanate–aluminate bismuth [0.97(Na 0.5 Bi 0.5 )TiO 3 –0.03BiAlO 3 ] solid‐solution films deposited on (100) Pt/TiO 2 /SiO 2 /Si substrates by a sol–gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2 P r of 38 μC/cm 2 and a leakage current density of 10 −7 –10 −6 A/cm 2 ( E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT ‐ BA films a viable lead‐free alternative to the lead‐based materials in such as biosensors and ultrasonic transducers.