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Orientation Growth and Magnetic Properties of BaM Hexaferrite Films Deposited by Direct Current Magnetron Sputtering
Author(s) -
Zhang Xiaozhi,
Yue Zhenxing,
Li Longtu
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.14007
Subject(s) - materials science , sputtering , sapphire , sputter deposition , epitaxy , thin film , annealing (glass) , stoichiometry , anisotropy , pole figure , cavity magnetron , film plane , magnetic anisotropy , composite material , magnetization , optics , nanotechnology , chemistry , magnetic field , layer (electronics) , laser , physics , organic chemistry , quantum mechanics
In‐plane c ‐axis oriented Ba‐hexaferrite (BaM) thin films were prepared on a ‐plane ( 11 2 ¯ 0 ) sapphire (Al 2 O 3 ) substrates using direct current ( DC ) magnetron sputtering followed by ex‐situ annealing. The sputtering atmosphere was found to have a great influence on the stoichiometry, orientation growth, and grain morphology of the as‐prepared BaM films. With moderate oxygen partial pressure during sputtering, in‐plane c ‐axis highly oriented BaM films were obtained. The films showed strong magnetic anisotropy with a high hysteresis loop squareness ( M r / M s of 0.96) along in‐plane easy axis and a low M r / M s of 0.05 along in‐plane hard axis. Rocking curves and pole figures were utilized to reveal the epitaxial‐like orientation relationship of the BaM films relative to the sapphire substrates, as well as the orientation growth dispersion of the hexagonal platelet‐shaped grains in BaM films.