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Highly Conductive p ‐Type Zinc blende SiC Thin Films Fabricated on Silicon Substrates by Magnetron Sputtering
Author(s) -
Kim Kwang Joo,
Kim Min Hwan,
Kim YoungWook
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13988
Subject(s) - materials science , raman spectroscopy , sputter deposition , thin film , annealing (glass) , silicon carbide , silicon , electrical resistivity and conductivity , crystallite , sputtering , optoelectronics , cavity magnetron , analytical chemistry (journal) , composite material , metallurgy , nanotechnology , optics , chemistry , electrical engineering , physics , engineering , chromatography
Polycrystalline silicon carbide (SiC) thin films were fabricated on Si(100) substrates using radio‐frequency magnetron sputtering followed by annealing at 1300°C in an Ar atmosphere. The SiC films exhibited a zinc blende structure with planar and point defects as detected by X‐ray diffraction and Raman spectroscopy. The SiC films were p ‐type conductive with electrical resistivity as low as 2.8 × 10 −3 Ω·cm at room temperature. The p ‐type character of the SiC films can be explained in terms of the Si vacancies in the C‐rich environment as evidenced by Raman spectroscopy.