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Ultra‐Fast Fabrication of <110>‐Oriented β‐SiC Wafers by Halide CVD
Author(s) -
Tu Rong,
Zheng Dingheng,
Sun Qingyun,
Han Mingxu,
Zhang Song,
Hu Zhiying,
Goto Takashi,
Zhang Lianmeng
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13980
Subject(s) - chemical vapor deposition , halide , wafer , deposition (geology) , methane , chemistry , microstructure , fabrication , total pressure , materials science , nanotechnology , analytical chemistry (journal) , crystallography , inorganic chemistry , organic chemistry , medicine , paleontology , alternative medicine , physics , pathology , quantum mechanics , sediment , biology
Φ80 mm‐diameter, highly <110>‐oriented β‐SiC wafers were ultra‐fast fabricated via halide chemical vapor deposition ( CVD ) using tetrachlorosilane (SiCl 4 ) and methane ( CH 4 ) as precursors. The effects of deposition temperature ( T dep ) and total pressure ( P tot ) on the orientations, microstructures, and deposition rate ( R dep ) were investigated. R dep dramatically increased with increasing T dep where maximum R dep was 930 μm/h at T dep = 1823 K and P tot = 4 kPa, leading to a maximum of 1.9 mm in thickness in 2 h deposition. The <110>‐oriented β‐SiC was obtained at T dep > 1773 K and P tot = 1–4 kPa. Growth mechanism of <110>‐oriented β‐SiC has also been discussed under consideration of crystallographic planes, surface energy, and surface morphology.