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Broadband Near‐Infrared Down‐Shifting by Yb–O Charge‐Transfer Band in Yb 3+ Singly Doped Tellurite Glasses
Author(s) -
Wang Yongjie,
Zhou Xianju,
Shen Jun,
Zhao Xiaoqi,
Wu Bing,
Jiang Sha,
Li Li
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13959
Subject(s) - materials science , doping , analytical chemistry (journal) , ion , ytterbium , excitation , infrared , quenching (fluorescence) , optoelectronics , optics , fluorescence , chemistry , physics , quantum mechanics , organic chemistry , chromatography
Yb 3+ singly doped tellurite as‐prepared glasses and glass ceramics were synthesized by high‐temperature melt‐quenching method. The excitation and emission spectra have shown that there is an efficient near‐infrared ( NIR ) down‐shifting due to the sensitization of a novel Yb 3+ –O 2− charge‐transfer ( CT ) band. The CT band in the present host is located at around 320 nm at room temperature, which is much lower than that in other oxide hosts reported before. The possible energy‐transfer mechanism from the Yb 3+ –O 2− CT band to the 2 F 5/2 multiplet of Yb 3+ ions is discussed in detail. The concentration quenching is not observed even when the Yb 3+ ‐doped concentration is increased up to 40 mol%. The excitation of this strong broad CT band causes intense NIR emission of Yb 3+ : 2 F 5/2 → 2 F 7/2 from 920 to 1120 nm, making the tellurite glasses suitable for efficient photovoltaic ( PV ) application as a spectral conversion material for the crystalline Si (c‐Si) solar cells.