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Electrical and Optical Properties of Transparent Conducting p ‐Type SrTiO 3 Thin Films
Author(s) -
Huang Wei,
Nechache Riad,
Li Shun,
Chaker Mohamed,
Rosei Federico
Publication year - 2016
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13949
Subject(s) - materials science , electrical resistivity and conductivity , thin film , molecular beam epitaxy , epitaxy , pulsed laser deposition , hall effect , semiconductor , doping , optoelectronics , perovskite (structure) , transmittance , deposition (geology) , diffraction , analytical chemistry (journal) , optics , nanotechnology , crystallography , chemistry , paleontology , physics , engineering , layer (electronics) , chromatography , sediment , electrical engineering , biology
We report a systematic study of the electrical and optical properties of epitaxial perovskite p‐ type In‐doped SrTiO 3 thin films (SrIn x Ti 1− x O 3 , 0 ≤ x ≤ 0.15) grown on single‐crystal (100)‐oriented LaAlO 3 substrates using a hybrid method which combines pulsed laser deposition and molecular beam epitaxy in a range of deposition conditions. X‐ray diffraction analysis confirms the epitaxial growth of high crystal quality films. Four‐point probe and Hall Effect measurements demonstrate that the films are p‐ type semiconductors with a low resistivity of ~10 −2 Ω·cm and a high carrier concentration of ~10 19 cm −3 . The optical transmittance spectra reveal that the films are highly transparent (˃70%) in the visible region.