CuCrSe 2  Ternary Chromium Chalcogenide: Facile Fabrication, Doping and Thermoelectric Properties | Zendy

Cheng Yudong | Zendy; Yang Junyou | Zendy; Jiang Qinghui | Zendy; Fu Liangwei | Zendy; Xiao Ye | Zendy; Luo Yubo | Zendy; Zhang Dan | Zendy; Zhang Mingyang | Zendy

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CuCrSe 2 Ternary Chromium Chalcogenide: Facile Fabrication, Doping and Thermoelectric Properties

Author(s) -

Cheng Yudong,

Yang Junyou,

Jiang Qinghui,

Fu Liangwei,

Xiao Ye,

Luo Yubo,

Zhang Dan,

Zhang Mingyang

Publication year - 2015

Publication title -

journal of the american ceramic society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.9

H-Index - 196

eISSN - 1551-2916

pISSN - 0002-7820

DOI - 10.1111/jace.13860

Subject(s) - materials science , electrical resistivity and conductivity , indium , chalcogenide , thermoelectric effect , ternary operation , doping , chromium , seebeck coefficient , analytical chemistry (journal) , thermoelectric materials , annealing (glass) , thermal conductivity , metallurgy , optoelectronics , composite material , chemistry , thermodynamics , physics , computer science , programming language , engineering , chromatography , electrical engineering

Starting from elemental powder mixture, ternary chromium chalcogenide CuCrSe 2 has been synthesized facilely via the route of mechanical alloying and subsequent annealing. Effect of indium doping on the thermoelectric performance of CuCrSe 2 has been studied detailedly. With the increase in indium doping content, the electrical resistivity decreases firstly until 0.25 at.% due to the electronegativity difference between In and Cr, and then increases due to the dissolution of indium and subsequent supersaturation precipitation of CuInSe 2 , and the Seebeck coefficient shows a similar trend with the electrical resistivity. The thermal conductivity increases firstly and then decreases with the increase in indium doping content due to the increasing phonon scattering by the CuInSe 2 and CuCr 2 Se 4 . As a result, a maximum ZT of 0.65 at 673 K was achieved in the sample with 1.0 at.% In doping, which is enhanced almost 54% in compared with the In‐free sample.

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