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Effect of Pressure on Microstructure of <111>‐Oriented β‐SiC Films: Research via Electron Backscatter Diffraction
Author(s) -
Zhang Song,
Xu Qingfang,
Sun Qingyun,
Zhu Peipei,
Tu Rong,
Hu Zhiying,
Han Mingxu,
Goto Takashi,
Zhang Lianmeng,
Yan Jiasheng,
Li Shusen
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13823
Subject(s) - electron backscatter diffraction , microstructure , misorientation , scanning electron microscope , materials science , chemical vapor deposition , electron diffraction , diffraction , crystallography , composite material , optics , analytical chemistry (journal) , mineralogy , chemistry , nanotechnology , grain boundary , physics , chromatography
Scanning electron microscopy ( SEM ) and high‐resolution electron backscatter diffraction ( EBSD ) has been employed to study the microstructure development of <111 > ‐oriented β‐SiC films prepared by laser chemical vapor deposition ( LCVD ) with various total pressure ( P tot ). The Surface morphology of films evolved from pyramids with sixfold symmetry to needlelike structure by increasing the P tot . The EBSD results indicated that the higher P tot (800 Pa) led to the lower neighbor‐pair misorientation and large in‐plane domains in β‐SiC films.