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Near Surface Changes Due to 700 keV Si + Irradiation of Titanium Silicon Carbide
Author(s) -
Qi Qiang,
Liu Chaozhuo Z.,
King Bruce V.,
O'Connor Daryl J.,
Kisi Erich H.,
Wang Kung,
Shi Liqun Q.
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13793
Subject(s) - irradiation , materials science , silicon carbide , raman spectroscopy , rutherford backscattering spectrometry , silicon , titanium , analytical chemistry (journal) , scanning electron microscope , radiation damage , carbide , phase (matter) , diffraction , composite material , metallurgy , chemistry , thin film , optics , nanotechnology , physics , organic chemistry , chromatography , nuclear physics
The radiation damage response of Ti 3 SiC 2 heated from 120°C to 850°C during 700 keV Si + irradiation has been investigated. The samples were analyzed using glancing incidence X‐ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy, and scanning electron microscopy. For the sample at 120°C, irradiation results in a buildup of a heterogeneous surface and the formation of TiC x . Irradiation at 200°C results in maximum microstrain, a maximum in the c lattice parameter, and the appearance of a β phase in addition to the normal α phase of Ti 3 SiC 2. A minimum in the observed damage level near the surface was seen for irradiation at a sample temperature of 300°C but the damaged phase increases at higher temperatures. Differences between the present work and a previous C irradiation study have been ascribed to the enhanced Si defect transport at low temperatures.