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Investigation of Annealing Induced Yttria Segregation in Sputtered Yttria‐Stabilized Zirconia Thin Films
Author(s) -
Subramaniam Kiruba Mangalam,
Rajeswara Rao Langoju Lakshmi,
Jampagaraju
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13777
Subject(s) - yttria stabilized zirconia , materials science , annealing (glass) , ionic conductivity , thin film , cubic zirconia , electrolyte , conductivity , activation energy , chemical engineering , composite material , nanotechnology , chemistry , ceramic , electrode , engineering
8 mol% yttria‐stabilized zirconia (8 YSZ ) is an extensively studied solid electrolyte. But there is no consistency in the reported ionic conductivity values of 8YSZ thin films. Interfacial segregation in YSZ thin films can affect its ionic conductivity by locally altering the surface chemistry. This article presents the effects of annealing temperature and film thickness on free surface yttria segregation behavior in 8YSZ thin film by Angle Resolved XPS and its influence on the ionic conductivity of sputtered 8YSZ thin films. Surface yttria concentration of about 32, 20, and 9 mol% have been found in 40 nm 8YSZ films annealed at 1273, 1173, and 1073 K, respectively. Yttria segregation is found to increase with increase in annealing temperature and film thickness. Ionic conductivities of 0.23, 0.16, and 0.08 Scm −1 are observed at 923 K for 40 nm 8YSZ films annealed at 1073, 1173, and 1273 K, respectively. The decrease in conductivity with increase in annealing temperature is attributed to the increased yttria segregation with annealing. Neither segregation nor film thickness is found to affect the activation energy of oxygen ion conduction. Target purity is found to play a key role in determining free surface yttria segregation in 8YSZ thin films.