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MnO 2 Thin Film Electrodes for Enhanced Reliability of Thin Glass Capacitors
Author(s) -
AkkopruAkgun Betul,
TrolierMcKinstry Susan,
Lanagan Michael T
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13774
Subject(s) - materials science , borosilicate glass , thin film , dielectric , electrode , substrate (aquarium) , raman spectroscopy , analytical chemistry (journal) , dielectric strength , composite material , optoelectronics , nanotechnology , chemistry , optics , physics , oceanography , chromatography , geology
Many dielectric thin films for energy storage capacitors fail by thermal breakdown events under high‐field drive conditions. The lifetime of the device can be improved under conditions where the current path within the defect regions in dielectrics is eliminated. Self‐healing electrodes were developed by depositing a manganese dioxide (MnO 2 ) thin film between the glass substrate and an aluminum film. For this purpose, thin films of MnO 2 on boroaluminosilicate glass were fabricated via chemical solution deposition and heat‐treated at temperatures in the range 500°C–900°C. The α‐MnO 2 structure was stabilized by Ba 2+ insertion to form the hollandite structure. The phase transition temperature of α‐MnO 2 to Mn 2 O 3 is strongly dependent on the Ba concentration, with transition temperatures of 600°C and 675°C with Ba concentrations of [Ba]/[Mn] = 0.04 and 0.1, respectively. The electrical resistivity increased from 4.5 Ω·cm for MnO 2 to 10 5 Ω·cm for Mn 2 O 3 . Both dielectric breakdown strength and the associated cleared aluminum electrode area increased with an MnO 2 interlayer between Al electrodes and the borosilicate glass. The enhancement in dielectric strength was related with self‐healing. The associated redox reaction between MnO 2 and Mn 2 O 3 was also proved by RAMAN spectroscopy following dielectric breakdown.