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Structural, Electrical, and Ferroelectric Properties of Nb‐Doped Na 0.5 Bi 4.5 Ti 4 O 15 Thin Films
Author(s) -
Raghavan Chinnambedu Murugesan,
Kim Jin Won,
Kim Sang Su
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13744
Subject(s) - ferroelectricity , thin film , materials science , doping , coercivity , electric field , analytical chemistry (journal) , polarization (electrochemistry) , dielectric , condensed matter physics , nanotechnology , optoelectronics , chemistry , physics , quantum mechanics , chromatography
Ferroelectric Na 0.5 Bi 4.5 Ti 4 O 15 (NaBTi) and donor Nb‐doped Na 0.5 Bi 4.5 Ti 3.94 Nb 0.06 O 15 (NaBTiNb) thin films were prepared on Pt(111)/Ti/SiO 2 /Si(100) substrates using a chemical solution deposition method. The doping with Nb 5+ ‐ions leads to tremendous improvements in the ferroelectric properties of the NaBTiNb thin film. Room‐temperature ferroelectricity with a large remnant polarization (2 P r ) of 64.1 μC/cm 2 and a low coercive field (2 E c ) of 165 kV/cm at an applied electric field of 475 kV/cm was observed for the NaBTiNb thin film. The polarization fatigue study revealed that the NaBTiNb thin film exhibited good fatigue endurance compared with the NaBTi thin film. Furthermore, the NaBTiNb thin film showed a low leakage current density, which was 1.48 × 10 −6 A/cm 2 at an applied electric field of 100 kV/cm.