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The Microstructure and Dielectric Properties of SiBCN Ceramics Fabricated Via LPCVD/CVI
Author(s) -
Liu Yongsheng,
Chai Nan,
Liu Xiaofei,
Qin Hailong,
Yin Xiaowei,
Zhang Litong,
Cheng Laifei
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13730
Subject(s) - materials science , ceramic , dielectric , microstructure , chemical vapor deposition , amorphous solid , dielectric loss , composite material , phase (matter) , mineralogy , chemical engineering , nanotechnology , optoelectronics , crystallography , chemistry , organic chemistry , engineering
Low‐pressure chemical vapor deposition and infiltration was used for the first time to fabricate SiBCN ceramics with proper dielectric properties to lower the preparation temperature. SiBCN ceramics indicated by thermodynamic phase diagram with different phase compositions from CH 3 SiCl 3 –NH 3 –BCl 3 ‐H 2 could be obtained through adjustable parameters. The as‐prepared SiBCN ceramics fabricated above 900°C showed proper dielectric properties with dielectric loss of about 0.1, which was due to the generation of amorphous carbon and SiC nanocrystals.