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Highly (100)‐Oriented Bi(Ni 1/2 Hf 1/2 )O 3 ‐PbTiO 3 Relaxor‐Ferroelectric Films for Integrated Piezoelectric Energy Harvesting and Storage System
Author(s) -
Xie Zhenkun,
Peng Bin,
Zhang Jie,
Zhang Xiaohua,
Yue Zhenxing,
Li Longtu
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13721
Subject(s) - materials science , piezoelectricity , ferroelectricity , permittivity , capacitor , energy storage , dielectric , relative permittivity , microelectromechanical systems , optoelectronics , analytical chemistry (journal) , nanotechnology , composite material , electrical engineering , voltage , chemistry , power (physics) , physics , quantum mechanics , engineering , chromatography
Highly (100)‐oriented 0.38Bi(Ni 1/2 Hf 1/2 )O 3 ‐0.62PbTiO 3 relaxor‐ferroelectric films were fabricated on Pt(111)/Ti/SiO 2 /Si(111) substrates by introducing a lead oxide seeding layer. A moderate relative permittivity ( ε r700 − 1000 ) , a low dissipation factor (tan δ < 5%), and strong relaxor‐like behavior (γ = 0.74) over a broad temperature region were observed. The energy storage density of approximately 45.1 ± 2.3 J/cm 3 was achieved for films with (100) preferential orientation, which is much higher than the value ~33.5 ± 1.7 J/cm 3 obtained from films with random orientation. Furthermore, the PbO‐seeded films are more capable of providing larger piezoelectric response (~113 ± 10 pm/V) compared to the films without seeds (~85 ± 8 pm/V). These excellent features indicate that the highly (100)‐oriented 0.38Bi(Ni 1/2 Hf 1/2 )O 3 ‐0.62PbTiO 3 films could be promising candidates for applications in high‐energy storage capacitors, high‐performance MEMS devices, and particularly for potential applications in the next‐generation integrated multifunctional piezoelectric energy harvesting and storage system.