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Slight Ti‐Doping‐Induced Strong Time‐Dependent Electrical Transport Behavior in CuCr 1− x Ti x O 2
Author(s) -
Li Renwen,
Qu Zhe,
Zhang Yuheng
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13641
Subject(s) - materials science , condensed matter physics , doping , electrical resistivity and conductivity , antiferromagnetism , metastability , relaxation (psychology) , crystallography , chemistry , psychology , social psychology , physics , optoelectronics , organic chemistry , electrical engineering , engineering
We investigate the effect of slight Ti substitution (≤0.5%) for Cr in CuCr 1− x Ti x O 2 by measuring the structural, magnetic, and electrical transport properties. Upon Ti doping, the antiferromagnetic transition becomes blurred without a change in Néel temperature. Ti 4+ substituting to Cr 3+ site is found to significantly enhance the resistivity due to the diminishing conducting holes. We find strong time‐dependent electrical transport behavior in CuCr 1− x Ti x O 2 induced by slight Ti doping. The key observation is that a metastable behavior occurs in Ti‐doped CuCr 1− x Ti x O 2 . A strong resistive relaxation ( RR ) behavior occurs in Ti‐doped CuCr 1− x Ti x O 2 with its magnitude remarkably increasing with increasing Ti content, while it is absent in undoped CuCrO 2 . The RR is found to be described by the combination of an exponential function and a logarithmic dependence at long time. The relaxation behavior in CuCr 1− x Ti x O 2 is found to show a correlation with the local lattice deformation.