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Far‐Red‐Emitting BiOCl:Eu 3+ Phosphor with Excellent Broadband NUV ‐Excitation for White‐Light‐Emitting Diodes
Author(s) -
Li Yongjin,
Zhao Zongyan,
Song Zhiguo,
Wan Ronghua,
Qiu Jianbei,
Yang Zhengwen,
Yin Zhaoyi,
Liu Xuee,
Liu Qun,
Zhou Yuting
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13589
Subject(s) - phosphor , doping , materials science , ion , luminescence , optoelectronics , dopant , excitation , light emitting diode , diode , impurity , chemistry , physics , organic chemistry , quantum mechanics
Rare‐earth ion‐doped semiconducting phosphor has attracted extensive attention due to the ability to achieve efficient luminescence through the host sensitization. Here, we present a new type red‐emitting Eu 3+ ‐doped BiOCl phosphors possessing a broad excitation band in the near‐ultraviolet ( NUV ) region. Experimental measurements and theoretical calculations confirm that Eu 3+ ion dopants result in forming impurity energy level near valence band, and the excellent broadband NUV ‐exciting ability of Eu 3+ ion is due to the electronic transitions of BiOCl band gap. Moreover, the highest emission intensity of the phosphors is from the 5 D 0 → 7 F 4 transition of Eu 3+ around 699 nm (far‐red) through whether host excitation or direct Eu 3+ ions excitation, which lie in the particular structure of BiOCl crystals. Our results indicate that the Eu 3+ ‐doped BiOCl crystals show great potential as red phosphors for white‐light‐emitting diodes.