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Confirmation of the Dominant Defect Mechanism in Amorphous In–Zn–O Through the Application of In Situ Brouwer Analysis
Author(s) -
Moffitt Stephanie L.,
Adler Alexander U.,
Gennett Thomas,
Ginley David S.,
Perkins John D.,
Mason Thomas O.
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13518
Subject(s) - amorphous solid , partial pressure , materials science , indium , in situ , zinc , oxygen , electrical resistivity and conductivity , conductivity , chemical engineering , analytical chemistry (journal) , chemistry , crystallography , metallurgy , organic chemistry , chromatography , electrical engineering , engineering
The dominant point defect mechanism of amorphous (a‐) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a‐IZO thin films in response to changes in oxygen partial pressure (pO2 ) at 300∘ C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼−1/6. This experimental method, known as Brouwer analysis, confirms doubly‐charged oxygen vacancies as the dominant defect species in a‐IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

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