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Microwave Dielectric Properties of a Low‐Firing Ba 2 BiV 3 O 11 Ceramic
Author(s) -
Li Jie,
Li Chunchun,
Wei Zhenhai,
Tang Ying,
Su Congxue,
Fang Liang
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13418
Subject(s) - ceramic , materials science , temperature coefficient , dielectric , microwave , analytical chemistry (journal) , sintering , composite number , mineralogy , composite material , chemistry , physics , optoelectronics , chromatography , quantum mechanics
A low‐firing microwave dielectric ceramic Ba 2 BiV 3 O 11 was prepared via solid‐state reaction method. Ba 2 BiV 3 O 11 ceramic could be well sintered at 840°C–880°C, with a ε r ~14.2, a high Q × f value ~68 700 GHz (at 8.7 GHz), and a negative temperature coefficient of −81 ppm/°C. τ f of Ba 2 BiV 3 O 11 was tuned to be near zero by formation of a composite with TiO 2 . 0.7Ba 2 BiV 3 O 11 –0.3TiO 2 ceramic sintered at 910°C showed improved properties with ε r = 15.7, Q × f = 53 200 GHz, and τ f = −2 ppm/°C.
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