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Dielectric Properties of Ultra‐Low Sintering Temperature Al 2 O 3 – BBSZ Glass Composite
Author(s) -
Chen MeiYu,
Juuti Jari,
Hsi ChiShiung,
Chia ChihTa,
Jantunen Heli
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13395
Subject(s) - sintering , materials science , dielectric , composite number , raman spectroscopy , composite material , ceramic , phase (matter) , permittivity , dielectric loss , mineralogy , analytical chemistry (journal) , optics , chemistry , organic chemistry , chromatography , physics , optoelectronics
Ceramic composites of B 2 O 3 –Bi 2 O 3 –SiO 2 –ZnO ( BBSZ ) glass mixed with Al 2 O 3 (10–50 vol%) were sintered at 450°C, and their microstructural and dielectric properties investigated. Dense structures were obtained when the Al 2 O 3 content was lower than 30 vol%. Raman, XRD, and FESEM showed the existence of a secondary phase, Bi 24 Si 2 O 40 , in all samples. The dielectric properties of the composite with 30 vol% addition of Al 2 O 3 showed good dielectric properties with ε r of 14.8 and 20.8 and 32.5 at 100 kHz and 100 MHz and 1 GHz, respectively. The tanδ values at the same frequencies were 0.004 and 0.006 and 0.016. The results show that BBSZ glass with different amounts of Al 2 O 3 exhibit widely applicable relative permittivity values and affordable loss and are thus promising candidates for ultra‐low sintering temperature applications.