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Effects of Bismuth Oxide Buffer Layer on BiFeO 3 Thin Film
Author(s) -
Leu ChingChich,
Lin TsungJu,
Chen ShuYu,
Hu ChenTi
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13377
Subject(s) - bismuth ferrite , materials science , buffer (optical fiber) , annealing (glass) , layer (electronics) , ferroelectricity , bismuth , stoichiometry , thin film , oxide , composite material , analytical chemistry (journal) , optoelectronics , metallurgy , nanotechnology , dielectric , multiferroics , chemistry , chromatography , telecommunications , organic chemistry , computer science
Bismuth ferrite (BiFeO 3 ) thin films with Bi 2 O 3 buffer layers were prepared on Si/SiO 2 /TiO 2 /Pt substrates by sol–gel‐derived spin‐coating method. The structural and electrical properties of BiFeO 3 was effectively improved by adding a Bi 2 O 3 buffer layers either at Pt/BiFeO 3 interface or on BiFeO 3 surface, also strongly depending on the positions and the annealing conditions of buffer layers. A 500°C‐annealed Bi 2 O 3 buffer layer could act as a Bi source for compensating Bi volatilization and a diffusion barrier for species from BiFeO 3 . A near stoichiometric BiFeO 3 with less defects and substrate contamination was obtained by employing a 500°C‐annealed Bi 2 O 3 buffer layer in between Pt substrate and BiFeO 3 . The structure change in BiFeO 3 led by such a buffer layer should result from the interfacial constraint between buffer layer and BiFeO 3 . Furthermore, this crystalline BiFeO 3 specimen exhibited a highly (100)‐textured, where this preferred orientation was attributed to the accumulation of Bi at Pt/ BFO interface. Therefore, the Pt/500°C‐annealed Bi 2 O 3 /BiFeO 3 /Pt thin film exhibited the good ferroelectric and magnetic properties. As compared to the usual method for controlling BiFeO 3 composition by adding excess Bi, this study indicates the more advantages using a Bi 2 O 3 buffer layer.