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The Effects of Annealing Atmosphere on the Electrical Properties of MgNb 2 O 6 /ITO Heterostructures
Author(s) -
Ho YiDa,
Chen KungRong,
Yu PeiChing,
Huang ChengLiang
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13340
Subject(s) - annealing (glass) , materials science , heterojunction , amorphous solid , thin film , optoelectronics , sol gel , atmosphere (unit) , electrical resistivity and conductivity , chemical engineering , nanotechnology , composite material , chemistry , crystallography , electrical engineering , thermodynamics , physics , engineering
The effects of annealing atmosphere ( N 2 , air and O 2 ) on the electrical properties of sol–gel‐derived MgNb 2 O 6 / ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb 4+ content increased when the films were annealed in the oxygen‐deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol–gel‐derived MgNb 2 O 6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb 2 O 6 / ITO heterostructures are also discussed in this study. The results show that MgNb 2 O 6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.