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Phase Stability and Optoelectronic Properties of the Bixbyite Phase in the Gallium–Indium–Tin–Oxide System
Author(s) -
Dolgonos Alex,
Wells Spencer A.,
Poeppelmeier Kenneth R.,
Mason Thomas O.
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13334
Subject(s) - bixbyite , gallium , dopant , indium , materials science , doping , band gap , solid solution , lattice constant , ternary operation , phase (matter) , analytical chemistry (journal) , seebeck coefficient , diffraction , chemistry , optoelectronics , optics , metallurgy , thermal conductivity , physics , organic chemistry , chromatography , computer science , composite material , programming language
X‐ray diffraction techniques were used to determine the phase boundaries of the In 2 O 3 solid solution phase in the Ga 2 O 3 – In 2 O 3 – SnO 2 ternary system. The effects of Ga and Sn content on the unit cell dimensions of the bixbyite phase were calculated by a linear regression fit, the results of which indicate the two substitutive cations have opposite and independent effects on the lattice parameter. These results suggest that the cations do not strongly interact with each other in the crystal. Measurements of optoelectronic properties were also taken on single‐phase bulk specimens within the solid solution to establish their dependence on composition. As anticipated, Sn doping yields corresponding increases in conductivity, reduction in the absolute value of Seebeck coefficient, and increase in optical band gap. In contrast, these properties are not significantly affected by varying Ga content, confirming that Ga behaves as an isovalent dopant at the low doping levels involved.