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Microscopic and Spectroscopic Characterization of Stacking‐Sequence Disordered SiC
Author(s) -
Ohyanagi Manshi,
Imai Takahito,
Toyofuku Naoki,
Nakagawa Daisuke,
Munir Zuhair A.
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13280
Subject(s) - raman spectroscopy , x ray photoelectron spectroscopy , materials science , amorphous solid , stacking , transmission electron microscopy , silicon carbide , crystallography , analytical chemistry (journal) , spectroscopy , nanotechnology , nuclear magnetic resonance , chemistry , optics , physics , chromatography , quantum mechanics , metallurgy
Nanometric silicon carbide ( SiC ) powder (~5 nm) with a stacking‐sequence disordered structure ( SD ‐ SiC ), synthesized from elemental powders of Si and C, was investigated by microscopic and several spectroscopic methods. The structure of SD ‐ SiC was characterized by transmission electron microscopy ( TEM ), 13 C , and 29 Si ‐ NMR , and by infrared ( IR ), Raman, and X‐ray photoelectron spectroscopy ( XPS ) methods. TEM characterizations showed relatively large deviations of the lattice parameters in the as‐synthesized SiC, indicative of the presence of stacking‐sequence disorder. IR analysis showed a weaker Si ‐ C bond in the SD ‐SiC than in the 3 C ‐ SiC . XPS determinations showed that C and Si in SD ‐ SiC are similar to those in 3 C ‐ SiC . Broader peaks of 29 Si and 13 C MAS ‐ NMR also indicate that the structure of SD ‐ SiC is different from that of 3 C ‐ SiC . Raman spectroscopy exhibited activities for the crystalline polytypes and the amorphous of SiC but lack of them for the SD ‐ SiC . The inactivity of Raman spectroscopy for the SD ‐ SiC along with large deviation of the lattice constant and the extremely broad X‐ray diffraction peaks would indicate that SD ‐SiC is a possible intermediate state between conventional polytype SiC and amorphous SiC , that is, a possible new type of SiC .