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Growth Mechanism and Defects of <111>‐Oriented β‐SiC Films Deposited by Laser Chemical Vapor Deposition
Author(s) -
Zhang Song,
Xu Qingfang,
Tu Rong,
Goto Takashi,
Zhang Lianmeng
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13248
Subject(s) - chemical vapor deposition , pulsed laser deposition , materials science , substrate (aquarium) , laser , deposition (geology) , thin film , chemistry , nanotechnology , optics , geology , paleontology , oceanography , physics , sediment , biology
Two kinds of <111>‐oriented β‐SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size (< d >) as a function of the distance from substrate ( h ) follows power laws of < d > ∝ h 0.62 and < d > ∝ h 0.71 , respectively. The planar defects in pyramidlike films were perpendicular to the growth direction, whereas those in needlelike β‐SiC films inclined to growth direction, which can be annihilated with meeting of anti‐couple defect. This self‐vanish of defects would develop a new approach to fabricate high quality <111>‐oriented β‐SiC.