Premium
p ‐Type Optoelectronic and Transparent Conducting Oxide Properties of Delafossite CuAl 1/2 Fe 1/2 O 2
Author(s) -
Ruttanapun Chesta,
Jindajitawat Phumin,
Buranasiri Prathan,
Harnwunggmoung Adul,
Charoenphakdee Anek,
Amornkitbamrung Vittaya
Publication year - 2015
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13239
Subject(s) - delafossite , materials science , band gap , oxide , seebeck coefficient , polaron , analytical chemistry (journal) , chemistry , optoelectronics , electron , thermal conductivity , physics , chromatography , quantum mechanics , metallurgy , composite material
CuAl 1/2 Fe 1/2 O 2 delafossite was prepared using a solid‐state reaction method to investigate its optical and electronic transport properties. CuAl 1/2 Fe 1/2 O 2 formed a hexagonal delafossite structure with an R3 ¯m space group. The positive Seebeck coefficient and the direct optical gap of 3.6 eV confirmed that the CuAl 1/2 Fe 1/2 O 2 delafossite in a p ‐type transparent conducting oxide. The fluorescence emission at 390 nm (green emission) confirmed that CuAl 1/2 Fe 1/2 O 2 has a direct transition band gap. Thermogravimetric analysis indicated a weight loss of 1.2%, caused by the intercalation of O atoms, which produced hole carriers from the different ionic radii at the B sites. The electric conductivity at room temperature was thermally activated, as predicted by the small‐polaron hopping mechanism, with an activation energy of 75 meV and a charge transport energy of 61 meV. CuAl 1/2 Fe 1/2 O 2 delafossite exhibited p ‐type optoelectronic behavior and is a transparent conducting oxide, which may be crucial in the p ‐type photonic and electrode industries.