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Fabrication and Dielectric Properties of Ba 0.63 Sr 0.37 TiO 3 Thin Films on SiC Substrates
Author(s) -
Song Lirong,
Chen Ying,
Wang Genshui,
Yang Lihui,
Ge Jun,
Dong Xianlin,
Xiang Pinghua,
Zhang Yuanyuan,
Tang Xiaodong
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13218
Subject(s) - materials science , dielectric , thin film , dissipation factor , ferroelectricity , fabrication , dielectric loss , figure of merit , sputtering , atmospheric temperature range , high κ dielectric , optoelectronics , nanotechnology , medicine , alternative medicine , physics , pathology , meteorology
Ba 0.63 Sr 0.37 TiO 3 (BST) films were first deposited on SiC substrates with LNO bottom electrodes by magnetron sputtering. The BST/LNO/ SiC thin films exhibit high dielectric tunability and low dielectric loss while maintaining excellent temperature coefficient of dielectric constant in the temperature range between 250 and 350 K. We also investigated the effect of film thickness on the dielectric properties. BST(430 nm)/LNO/SiC film has higher tunability (68.09% @700 kV /cm), lower loss tangent (tanδ = 0.00987) and quite a bit higher figure of merit (FOM = 68.99) as compared with that of BST(300 nm)/LNO/SiC film. Our results demonstrate that combining ferroelectric BST films with SiC substrates is very promising for the development of tunable devices over a large temperature range.