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High‐Temperature Creep Behavior of SiOC Glass‐Ceramics: Influence of Network Carbon Versus Segregated Carbon
Author(s) -
Ionescu Emanuel,
Balan Corneliu,
Kleebe HansJoachim,
Müller Mathis M.,
Guillon Olivier,
Schliephake Daniel,
Heilmaier Martin,
Riedel Ralf
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13206
Subject(s) - creep , viscoelasticity , materials science , rheology , carbon fibers , composite material , viscosity , phase (matter) , activation energy , ceramic , stress (linguistics) , silicon , composite number , chemistry , metallurgy , organic chemistry , linguistics , philosophy
Three silicon oxycarbide samples with different carbon contents are analyzed in the present study with respect to their high‐temperature creep behavior. The tests were performed in compression at 1100°C, 1200°C, and 1300°C; in this temperature range the mechanism of creep relies on viscoelastic flow within the samples and has been modeled with the Jeffreys viscoelastic model. After the release of the applied mechanical stress, a viscoelastic recovery behavior was observed in all samples. The creep behavior of the investigated samples indicates two rheological contributions in SiOC : (i) a high viscous answer, coming from the silica‐rich network, and (ii) an elastic response from the segregated carbon phase within the samples. Furthermore, two distinct effects of the carbon phase on the HT creep behavior of SiOC were identified and are discussed in the present paper: the effect of the carbon presence within the SiOC network (the “carbidic” carbon), which induces a significant increase in the viscosity and a strong decrease in the activation energy for creep, as compared to vitreous silica; and the influence of the segregated carbon phase (the “free” carbon), which has been shown to affect the viscosity and the activation energy of creep and dominates the creep behavior in phase‐separated silicon oxycarbides.