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Tantalum Enrichment in Tantalum‐Doped Titanium Dioxide
Author(s) -
Sheppard Leigh R.,
Holik John,
Liu Rong,
Macartney Sam,
Wuhrer Richard
Publication year - 2014
Publication title -
journal of the american ceramic society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.9
H-Index - 196
eISSN - 1551-2916
pISSN - 0002-7820
DOI - 10.1111/jace.13201
Subject(s) - tantalum , oxidizing agent , annealing (glass) , materials science , doping , titanium , titanium dioxide , oxygen , atmospheric temperature range , analytical chemistry (journal) , chemical engineering , metallurgy , mineralogy , chemistry , environmental chemistry , thermodynamics , physics , optoelectronics , organic chemistry , engineering
This investigation has assessed the behavior of Ta enrichment in Ta‐doped TiO 2 under various conditions of controlled oxygen activity and temperature. The aim has been to establish the relationships between specific processing conditions and the resulting compositional variation within the surface and near‐surface region. Under the application of oxidizing conditions [p(O 2 ) = 101 kPa], it has been observed that Ta will strongly enrich the surface of Ta‐doped TiO 2 irrespective of the annealing temperature (over the range of 1173–1523 K). However, under reducing conditions [p(O 2 ) in the vicinity of 10 −10 Pa], Ta enrichment is observed at 1173 K, but Ta depletion from the surface and near‐surface is observed at 1348 and 1523 K. This is attributed to an apparent lack of stability of the surface phase, which could possibly be TiTa 2 O 7 . The results for the investigation contribute to the engineering of TiO 2 ‐based photoelectrode materials that possess improved charge separation properties.